SPB80N04S2L-03
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB80N04S2L-03 is an N-Channel Power MOSFET from the OptiMOS™ series, designed for demanding power switching applications. This component features a 40V drain-source voltage (Vdss) and supports a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 3.1mOhm is achieved at 80A and 10V gate-source voltage.
The SPB80N04S2L-03 utilizes advanced MOSFET technology for efficient operation, with a maximum gate charge (Qg) of 213 nC at 10V and input capacitance (Ciss) of 7930 pF at 25V. It operates across a wide temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. This device is packaged in a surface-mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, supplied in Tape & Reel (TR). Its robust specifications make it suitable for automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 213 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7930 pF @ 25 V |
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