SPB80N04S2-04
MOSFET N-CH 40V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N04S2-04 is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 300W at the same temperature. The low on-resistance (Rds On) is specified at 3.4mOhm at 80A and a gate-source voltage (Vgs) of 10V, indicating superior conduction characteristics.
The SPB80N04S2-04 is packaged in a surface-mount TO-263-3 (PG-TO263-3-2) configuration, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 170 nC at 10V and an input capacitance (Ciss) of 6980 pF at 25V. The MOSFET operates within an extended temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V. This robust component is utilized across various demanding industries, including automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6980 pF @ 25 V |
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