SPB80N03S2L-03 G
MOSFET N-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ SPB80N03S2L-03-G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30 V drain-source voltage and a continuous drain current of 80 A at 25°C, with a maximum power dissipation of 300 W. The low on-resistance of 2.8 mOhm at 80 A and 10 V Vgs, combined with a 4.5V to 10V drive voltage range, ensures efficient power transfer. Key parameters include a maximum gate charge of 220 nC at 10 V and an input capacitance of 8180 pF at 25 V. The TO-263-3-2 (PG-TO263-3-2) surface mount package facilitates integration into compact designs. Operating temperature ranges from -55°C to 175°C. This MOSFET is utilized in power supply, automotive, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
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