SPB80N03S2-03
MOSFET N-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB80N03S2-03 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 80A at 25°C (Tc). The low on-resistance (Rds On) is specified at a maximum of 3.1mOhm at 80A and 10V gate-source voltage. With a maximum power dissipation of 300W (Tc), this MOSFET is suitable for high-power switching applications. The gate charge (Qg) is 150 nC maximum at 10V, and input capacitance (Ciss) is 7020 pF maximum at 25V. The SPB80N03S2-03 is offered in a PG-TO263-3-2 surface mount package, commonly known as D2PAK, and is supplied on tape and reel. This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7020 pF @ 25 V |
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