SPB77N06S2-12
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB77N06S2-12 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc). The Rds On is specified at a maximum of 12 mOhm at 38 A and 10 V gate drive. With a maximum power dissipation of 158 W (Tc), it is housed in a TO-263-3, D2PAK surface mount package. Key parameters include a Gate Charge (Qg) of 60 nC at 10 V and Input Capacitance (Ciss) of 2350 pF at 25 V. This component is suitable for applications in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 93µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 25 V |
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