SPB70N10L
MOSFET N-CH 100V 70A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB70N10L is an N-Channel Power MOSFET from the SIPMOS® series, housed in a PG-TO263-3-2 package. This surface mount component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C with a maximum power dissipation of 250W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 16mOhm at 50A and 10V, and a gate charge (Qg) of 240 nC at 10V. Designed for robust performance, it operates across a temperature range of -55°C to 175°C. This device finds application in power supply units, motor control, and automotive systems requiring efficient power switching.
Additional Information
Series: SIPMOS®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
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