SPB47N10
MOSFET N-CH 100V 47A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB47N10 is a robust N-Channel SIPMOS® power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 47A at 25°C, with a maximum power dissipation of 175W (Tc). The low on-resistance of 33mOhm is achieved at 33A and 10V gate-source voltage, complemented by a gate charge (Qg) of 105 nC (max) at 10V. Input capacitance (Ciss) is rated at 2500 pF (max) at 25V.
The SPB47N10 utilizes surface mount technology with a PG-TO263-3-2 package, also known as TO-263AB. Its operating temperature range spans from -55°C to 175°C (TJ). This MOSFET is suitable for power management, automotive, and industrial applications requiring high efficiency and reliable switching performance. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 2mA. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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