SPB42N03S2L-13 G
MOSFET N-CH 30V 42A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB42N03S2L-13-G is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 42A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The low on-resistance (Rds On) of 12.6mOhm at 21A and 10V Vgs makes it suitable for demanding power conversion tasks.
Key electrical parameters include a gate charge (Qg) of 30.5 nC at 10V Vgs and an input capacitance (Ciss) of 1130 pF at 25V Vds. The SPB42N03S2L-13-G is housed in a PG-TO263-3-2 (TO-263-3, D2PAK) package, facilitating surface mounting. Its operating temperature range is -55°C to 175°C (TJ). This component finds utility in automotive, industrial, and consumer electronics sectors where robust power switching is critical. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. It is supplied in tape and reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 37µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |
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