SPB42N03S2L-13
MOSFET N-CH 30V 42A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB42N03S2L-13 is a high-performance N-Channel Power MOSFET from the OptiMOS™ series. This device features a 30V drain-source voltage and a continuous drain current capability of 42A at 25°C, with a maximum power dissipation of 83W at the same temperature. The low on-resistance of 12.6mOhm at 21A and 10V gate-source voltage is critical for efficient power conversion. With a gate charge of 30.5 nC at 10V and input capacitance of 1130 pF at 25V, it is optimized for fast switching applications. The SPB42N03S2L-13 is housed in a surface-mount PG-TO263-3-2 (TO-263AB) package, suitable for automated assembly. Its operating temperature range of -55°C to 175°C makes it a robust choice for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 37µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |
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