SPB35N10 G
MOSFET N-CH 100V 35A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPB35N10-G, an N-Channel SIPMOS® series power MOSFET. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 35 A at 25°C (Tc). With a maximum power dissipation of 150 W (Tc) and a low on-resistance (Rds On) of 44 mOhm at 26.4 A and 10 V gate drive, it is optimized for efficient power switching. Key parameters include a gate charge (Qg) of 65 nC at 10 V and an input capacitance (Ciss) of 1570 pF at 25 V. The device is housed in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB. Operating over a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 26.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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