SPB21N10 G
MOSFET N-CH 100V 21A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPB21N10-G is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 21A at 25°C, with a maximum power dissipation of 90W. The low on-resistance (Rds On) of 80mOhm at 15A and 10V drive voltage ensures efficient power transfer. Key parameters include a Gate Charge (Qg) of 38.4 nC and Input Capacitance (Ciss) of 865 pF at 25V, facilitating robust switching characteristics. Packaged in a TO-263-3 (D2PAK) surface-mount configuration, this MOSFET is suitable for use in power supply units, automotive electronics, and industrial motor control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 44µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 25 V |
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