SPB21N10
MOSFET N-CH 100V 21A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPB21N10, an N-channel SIPMOS® MOSFET, offers a robust 100V drain-to-source voltage and a continuous drain current capability of 21A at 25°C (Tc). This surface-mount device, housed in a PG-TO263-3-2 package, features a maximum on-resistance of 80mOhm at 15A and 10V Vgs. With a total gate charge of 38.4 nC (max) at 10V and input capacitance of 865 pF (max) at 25V, it is suitable for demanding applications. The power dissipation is rated at 90W (Tc), and it operates across a temperature range of -55°C to 175°C (TJ). This component finds utility in power management, automotive, and industrial automation sectors.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 44µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
