SPB18P06P
MOSFET P-CH 60V 18.7A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPB18P06P is a P-channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 18.7A at 25°C. The on-resistance (Rds On) is a maximum of 130mOhm at 13.2A and a gate-source voltage (Vgs) of 10V. With a maximum power dissipation of 81.1W (Ta), this MOSFET is suitable for demanding power management tasks. Key electrical characteristics include a gate charge (Qg) of 28nC at 10V and input capacitance (Ciss) of 860pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (2 leads + tab) surface mount package, it is supplied on Tape & Reel. This component finds application in automotive and industrial power control systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 81.1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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