SPB16N50C3ATMA1
MOSFET N-CH 560V 16A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SPB16N50C3ATMA1 is a CoolMOS™ N-channel power MOSFET featuring 560V drain-source voltage and 16A continuous drain current at 25°C (Tc). This surface mount device, packaged in a PG-TO263-3-2 (TO-263AB), offers a maximum on-resistance of 280mOhm at 10A and 10V. Key parameters include a 66nC gate charge (Qg) at 10V and 1600pF input capacitance (Ciss) at 25V. With a maximum power dissipation of 160W (Tc), it operates from -55°C to 150°C. This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
