SPB160N04S2L03DTMA1
MOSFET N-CH 40V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ SPB160N04S2L03DTMA1 is an N-Channel Power MOSFET designed for high-current applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 160A at 25°C, with a maximum power dissipation of 300W. The low on-resistance of 2.7mOhm at 80A and 10V drive voltage, coupled with a gate charge of 230 nC, ensures efficient switching performance. Operating across a junction temperature range of -55°C to 175°C, this MOSFET is housed in a surface-mount TO-263-7 (PG-TO263-7-3) package, supplied on tape and reel. It is suitable for use in demanding applications within the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 25 V |
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