SPB160N04S203CTMA1
MOSFET N-CH 40V 160A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPB160N04S203CTMA1, an N-Channel OptiMOS™ Power MOSFET. This surface mount device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 160A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) is specified at 2.9mOhm at 80A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC @ 10V and input capacitance (Ciss) of 7320 pF @ 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in a PG-TO263-7-3 package, commonly known as TO-263-7, D2PAK. This component is utilized in demanding applications across automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7320 pF @ 25 V |
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