SPB12N50C3ATMA1
MOSFET N-CH 560V 11.6A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPB12N50C3ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features a 560V drain-source breakdown voltage and a continuous drain current capability of 11.6A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance of 380mOhm at 7A and 10V drive voltage, coupled with a gate charge of 49 nC (Max) at 10V, contributes to reduced switching losses. The input capacitance (Ciss) is rated at 1200pF (Max) at 25V. Packaged in a surface-mount PG-TO263-3-2 (TO-263AB) and supplied on tape and reel, this MOSFET is suitable for applications in server power supplies, industrial power supplies, and lighting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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