SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPB11N60C3ATMA1 is a 650V N-Channel Power MOSFET designed for high-efficiency applications. This device features a continuous drain current capability of 11A at a case temperature of 25°C, with a maximum power dissipation of 125W. The Rds(on) is specified at a maximum of 380mOhm under 7A and 10V Vgs. Key parameters include a Ciss of 1200pF at 25V and a Qg of 60nC at 10V. The operating temperature range is -55°C to 150°C. The SPB11N60C3ATMA1 is supplied in a PG-TO263-3-2 (TO-263-3) surface mount package and is available on tape and reel. This MOSFET is suitable for power supply units, server power, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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