SPB10N10
MOSFET N-CH 100V 10.3A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB10N10 is an N-Channel SIPMOS® MOSFET designed for robust performance in demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10.3A at 25°C (Tc). The Rds On (Max) is specified at 170mOhm at 7.8A and 10V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 19.4 nC at 10V and an input capacitance (Ciss) of 426 pF at 25V. Rated for a maximum power dissipation of 50W (Tc), this device is housed in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power management, automotive systems, and industrial motor control.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 426 pF @ 25 V |
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