SPB100N08S2-07
MOSFET N-CH 75V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number SPB100N08S2-07, features a 75 V drain-source voltage (Vdss) and a continuous drain current of 100 A at 25°C (Tc). This surface mount device, packaged in a TO-263-3, D2PAK configuration, offers a maximum on-resistance (Rds On) of 6.8 mOhm at 66 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 300 W (Tc), it is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 200 nC at 10 V and input capacitance (Ciss) of 6020 pF at 25 V. This component operates over a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel packaging. Its robust design makes it applicable in automotive and industrial power supply systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6020 pF @ 25 V |
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