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SPB100N06S2L-05

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SPB100N06S2L-05

MOSFET N-CH 55V 100A TO263-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ SPB100N06S2L-05 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 100 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The low on-resistance (Rds On) of 4.4 mOhm at 80 A and 10 V (Vgs) minimizes conduction losses, while the gate charge (Qg) is 230 nC at 10 V (Vgs). With a mounting type of Surface Mount, the SPB100N06S2L-05 is housed in a TO-263-3, D2PAK package. The operating temperature range is -55°C to 175°C (TJ), and it supports drive voltages from 4.5V to 10V. This MOSFET is suitable for demanding power electronics designs in industries such as automotive, industrial power supplies, and motor control. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7530 pF @ 25 V

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