SPB100N06S2-05
MOSFET N-CH 55V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB100N06S2-05 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 100 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The device offers a low on-resistance (Rds On) of 4.7 mOhm at 80 A and 10 V. It is designed for surface mounting within the TO-263-3, D2PAK package. Key electrical characteristics include a Gate Charge (Qg) of 170 nC at 10 V and Input Capacitance (Ciss) of 6800 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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