SPB100N04S2-04
MOSFET N-CH 40V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB100N04S2-04 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). With a maximum Rds(on) of 3.3mOhm at 80A and 10V gate drive, it offers low conduction losses. The MOSFET boasts a maximum power dissipation of 300W (Tc) and a low gate charge of 172nC (Max) at 10V. Housed in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount package, it is supplied on tape and reel. This component is suitable for demanding applications in automotive, industrial power systems, and power management solutions. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7220 pF @ 25 V |
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