SPB08P06PGATMA1
MOSFET P-CH 60V 8.8A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB08P06PGATMA1 is a P-Channel SIPMOS® Power MOSFET designed for demanding applications in automotive and industrial sectors. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current of 8.8A at 25°C (Ta), with a maximum power dissipation of 42W (Tc). The SPB08P06PGATMA1 offers a low on-resistance (Rds On) of 300mOhm at 6.2A and 10V Vgs. Key parameters include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 420 pF at 25V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO263-3 (D2PAK) surface mount package. The maximum gate-source voltage is ±20V.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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