SPB07N60S5ATMA1
MOSFET N-CH 600V 7.3A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPB07N60S5ATMA1 is a 600V N-channel power MOSFET in a PG-TO263-3-2 surface mount package. This device offers a continuous drain current of 7.3A at 25°C (Tc) and a maximum power dissipation of 83W (Tc). Key electrical characteristics include a Drain-to-Source Voltage (Vdss) of 600V and a maximum Rds(on) of 600mOhm at 4.6A and 10V drive voltage. The gate charge (Qg) is 35 nC maximum at 10V, and input capacitance (Ciss) is 970 pF maximum at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power supply units, server power, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 350µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 25 V |
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