SPB07N60C3ATMA1
MOSFET N-CH 650V 7.3A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB07N60C3ATMA1 is an N-channel CoolMOS™ Power MOSFET. This device features a 650V drain-source voltage and a continuous drain current of 7.3A at 25°C (Tc) with a maximum power dissipation of 83W (Tc). The on-resistance (Rds On) is specified at 600mOhm maximum at 4.6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 27 nC maximum at 10V and input capacitance (Ciss) of 790 pF maximum at 25V. The device is housed in a PG-TO263-3-2 package, designed for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch-mode power supplies, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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