SPB04N60S5ATMA1
MOSFET N-CH 600V 4.5A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB04N60S5ATMA1 is a 600 V N-Channel CoolMOS™ Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum continuous drain current of 4.5 A at 25°C (Tc) and a maximum on-resistance of 950 mO at 2.8 A and 10 V gate drive. With a power dissipation capability of 50 W (Tc), it is suitable for demanding thermal environments. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, facilitating automated assembly. Key electrical characteristics include a gate charge (Qg) of 22.9 nC at 10 V and an input capacitance (Ciss) of 580 pF at 25 V. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 200µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
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