SPB04N50C3ATMA1
MOSFET N-CH 560V 4.5A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPB04N50C3ATMA1, offers a 560V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C (Tc). This surface-mount device features a maximum on-resistance (Rds(on)) of 950mOhm at 2.8A and 10V gate-source voltage. The PG-TO263-3-2 package provides a robust solution for demanding applications. With a maximum power dissipation of 50W (Tc) and a junction temperature range of -55°C to 150°C, this MOSFET is suitable for use in power supply units, lighting, and industrial motor control systems. Key electrical characteristics include a gate charge (Qg) of 22 nC at 10V and an input capacitance (Ciss) of 470 pF at 25V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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