SPB03N60S5ATMA1
MOSFET N-CH 600V 3.2A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPB03N60S5ATMA1 is a 600V N-channel power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current capability of 3.2A at 25°C (Tc) and a maximum power dissipation of 38W (Tc). The SPB03N60S5ATMA1 offers a low on-resistance of 1.4 Ohm maximum at 2A, 10V, and a gate charge of 16 nC maximum at 10V. It has an input capacitance (Ciss) of 420 pF maximum at 25V and a gate-source breakdown voltage of ±20V. The threshold voltage (Vgs(th)) is 5.5V maximum at 135µA. Packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount configuration, it operates within a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power factor correction, switch-mode power supplies, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 135µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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