SPB02N60S5ATMA1
MOSFET N-CH 600V 1.8A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPB02N60S5ATMA1, offers a 600V drain-source voltage and a continuous drain current of 1.8A at 25°C with a maximum power dissipation of 25W. This surface mount device features a TO-263-3, D2PAK package and a low on-resistance of 3 Ohm maximum at 1.1A, 10V. Key parameters include a gate charge of 9.5 nC at 10V and an input capacitance of 240 pF at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 80µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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