SPB02N60C3ATMA1
MOSFET N-CH 650V 1.8A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB02N60C3ATMA1 is a 650V N-Channel CoolMOS™ Power MOSFET. This device offers a continuous drain current (Id) of 1.8A at 25°C (Tc) and a maximum power dissipation of 25W (Tc). The SPB02N60C3ATMA1 features a low on-resistance (Rds On) of 3Ohm maximum at 1.1A and 10V gate drive. Key parameters include a gate charge (Qg) of 12.5 nC (max) at 10V and input capacitance (Ciss) of 200 pF (max) at 25V. The MOSFET is supplied in a PG-TO263-3-2 surface mount package, commonly known as TO-263AB. This component is suitable for applications in power supplies, industrial automation, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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