SPA16N50C3XKSA1
MOSFET N-CH 560V 16A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel MOSFET, part number SPA16N50C3XKSA1, offers a 560V drain-source voltage and a continuous drain current of 16A at 25°C. This N-channel power MOSFET features a maximum Rds(on) of 280mOhm at 10A and 10V. The device is housed in a PG-TO220-3-31 package suitable for through-hole mounting. Key parameters include a gate charge of 66 nC at 10V and an input capacitance of 1600 pF at 25V. With a maximum power dissipation of 34W at 25°C, this component operates across a temperature range of -55°C to 150°C. It is utilized in applications such as power supply units, lighting, and industrial power control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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