SPA15N60CFDXKSA1
MOSFET N-CH 650V 13.4A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPA15N60CFDXKSA1 is a 650V N-Channel power MOSFET. This device features a continuous drain current of 13.4A (Tc) and a maximum power dissipation of 34W (Tc). The on-resistance (Rds On) is specified at 330mOhm at 9.4A and 10V gate drive. Key parameters include a gate charge (Qg) of 84 nC @ 10V and input capacitance (Ciss) of 1820 pF @ 25V. The SPA15N60CFDXKSA1 is housed in a PG-TO220-3-31 package with a through-hole mounting type. This component is suitable for applications within the industrial and auxiliary power supply sectors.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 9.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 750µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
