SPA12N50C3XKSA1
MOSFET N-CH 560V 11.6A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPA12N50C3XKSA1, is a high-voltage device designed for demanding applications. This Through Hole component features a drain-source voltage (Vds) of 560 V and a continuous drain current (Id) of 11.6 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 380 mOhm at 7 A and 10 V. Key parameters include a gate charge (Qg) of 49 nC and an input capacitance (Ciss) of 1200 pF. The power dissipation (Pd) is rated at 33 W (Tc) and it operates within an ambient temperature range of -55°C to 150°C (TJ). The PG-TO220-3-31 package is suitable for power supply units, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 500µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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