SPA11N80C3XKSA1
MOSFET N-CH 800V 11A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ SPA11N80C3XKSA1 is an 800 V N-Channel power MOSFET designed for high-voltage applications. This device features a continuous drain current capability of 11A at 25°C and a maximum power dissipation of 34W (Tc). With a low Rds(on) of 450mOhm at 7.1A and 10V, it offers efficient switching performance for demanding power conversion tasks. The input capacitance (Ciss) is rated at 1600 pF @ 100 V, and the gate charge (Qg) is 85 nC @ 10 V. The SPA11N80C3XKSA1 is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. This component finds application in power supplies, industrial motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 7.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 100 V |
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