SPA11N60CFDXKSA1
MOSFET N-CH 600V 11A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ SPA11N60CFDXKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 440mOhm at 7A and 10V gate-source voltage (Vgs). Its typical applications include switch-mode power supplies, lighting, and motor control systems. The SPA11N60CFDXKSA1 is housed in a PG-TO220-3-31 package, facilitating through-hole mounting. Key specifications include a gate charge (Qg) of 64nC at 10V and an input capacitance (Ciss) of 1200pF at 25V. The operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 33W (Tc).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.9mA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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