SPA07N65C3XKSA1
MOSFET N-CH 650V 7.3A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPA07N65C3XKSA1 is a 650 V N-channel CoolMOS™ Power Transistor. This device offers a continuous drain current of 7.3 A (Tc) with a maximum power dissipation of 32 W (Tc). It features a low on-resistance of 600 mOhm at 4.6 A and 10 V gate drive voltage. The gate charge (Qg) is 27 nC maximum at 10 V, and the input capacitance (Ciss) is 790 pF maximum at 25 V. The device is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in applications such as power factor correction, switch mode power supplies, and general purpose power switching.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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