SPA07N60CFDXKSA1
MOSFET N-CH 650V 6.6A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ SPA07N60CFDXKSA1 is a 650 V N-channel power MOSFET designed for high-performance applications. This device features a continuous drain current of 6.6A (Tc) and a maximum power dissipation of 32W (Tc). With a low on-resistance of 700mOhm at 4.6A and 10V gate-source voltage, it offers efficient switching characteristics. The gate charge (Qg) is 47 nC maximum at 10V, and input capacitance (Ciss) is 790 pF maximum at 25V. The SPA07N60CFDXKSA1 is housed in a PG-TO220-3-31 package, suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, industrial motor control, and lighting solutions.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 300µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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