SPA06N60C3XKSA1
MOSFET N-CH 650V 6.2A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPA06N60C3XKSA1, offers a 650V drain-source voltage and a continuous drain current of 6.2A at 25°C (Tc). This through-hole component features a maximum power dissipation of 32W (Tc) and a low on-resistance of 750mOhm at 3.9A and 10V. The gate charge (Qg) is specified at a maximum of 31 nC at 10V, with input capacitance (Ciss) at 620 pF (max) at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this device is housed in a PG-TO220-3-31 package. Its robust design makes it suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 260µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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