SPA04N80C3XKSA1
MOSFET N-CH 800V 4A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ SPA04N80C3XKSA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a 800 V breakdown voltage (Vdss) and a continuous drain current capability of 4 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.3 Ohm at 2.5 A and 10 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 31 nC at 10 V and an input capacitance (Ciss) of 570 pF at 100 V. With a maximum power dissipation of 38 W (Tc), the SPA04N80C3XKSA1 is housed in a TO-220-3 Full Pack package (PG-TO220-3-31) for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units and industrial motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
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