SPA03N60C3XKSA1
MOSFET N-CH 650V 3.2A TO220-FPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPA03N60C3XKSA1 is an N-Channel power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 3.2A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1.4 Ohm at 2A and 10V gate drive. Key parameters include a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 400 pF at 25V. The device is packaged in a TO-220-3 Full Pack (PG-TO220-3-31) for through-hole mounting, with a maximum power dissipation of 29.7W (Tc). Operating temperature range is from -55°C to 150°C (TJ). This MOSFET technology is suitable for use in power supplies, server applications, and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Supplier Device Package | PG-TO220-3-31 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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