SN7002W E6327
MOSFET N-CH 60V 230MA SOT323-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SN7002W-E6327 is an N-Channel MOSFET from the SIPMOS® series, housed in a PG-SOT323 package. This surface mount component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 230mA at 25°C. The device offers a maximum on-resistance (Rds On) of 5 Ohms at 230mA drain current and 10V gate-source voltage. Key parameters include a maximum power dissipation of 500mW (Ta), a gate charge (Qg) of 1.5 nC at 10V, and an input capacitance (Ciss) of 45 pF at 25V. The threshold voltage (Vgs(th)) is a maximum of 1.8V at 26µA. This MOSFET is suitable for applications across various industries, including consumer electronics and industrial automation. The component is supplied in tape and reel packaging.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 230mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 26µA |
| Supplier Device Package | PG-SOT323 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
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