SN7002NH6327XTSA1
MOSFET N-CH 60V 200MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SN7002NH6327XTSA1 is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at 25°C. The device features a maximum Rds On of 5 Ohms at 500mA and 10V, with a gate drive range from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 1.5 nC at 10V and an input capacitance (Ciss) of 45 pF at 25V. With a power dissipation of 360mW (Ta), it is rated for operation across a temperature range of -55°C to 150°C. The SN7002NH6327XTSA1 is supplied in a PG-SOT23 package and is qualified to AEC-Q101, making it suitable for automotive applications.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 26µA |
| Supplier Device Package | PG-SOT23 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
| Qualification | AEC-Q101 |