SN7002N L6327
MOSFET N-CH 60V 200MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SN7002N-L6327 is an N-Channel SIPMOS® MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 200 mA at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 5 Ohms at 500 mA and 10 V. With a power dissipation of 360 mW (Ta), it is suitable for power management in various electronic systems. The SN7002N-L6327 is housed in a PG-SOT23 package, facilitating surface mounting. Key electrical parameters include a Gate Charge (Qg) of 1.5 nC (max) at 10 V and an Input Capacitance (Ciss) of 45 pF (max) at 25 V. This MOSFET is utilized across industries such as consumer electronics and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 26µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
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