SN7002N E6433
MOSFET N-CH 60V 200MA SOT23-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SN7002N-E6433 is an N-Channel SIPMOS® MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 200mA at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 5 Ohm at 500mA and 10V gate-source voltage. Key electrical parameters include a typical Gate Charge (Qg) of 1.5 nC at 10V and an Input Capacitance (Ciss) of 45 pF at 25V. Operating across a temperature range of -55°C to 150°C, the SN7002N-E6433 is housed in a PG-SOT23 package, supplied on tape and reel. Its specifications make it suitable for use in various industrial and consumer electronics applications requiring efficient switching and low power dissipation.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 26µA |
| Supplier Device Package | PG-SOT23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
