SI4435DYTR
MOSFET P-CH 30V 8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies P-Channel HEXFET® MOSFET, part number SI4435DYTR, offers a 30V drain-source voltage and 8A continuous drain current at 25°C. This surface mount device features a maximum on-resistance of 20mOhm at 8A and 10V Vgs, with a gate charge of 60nC at 10V. The input capacitance (Ciss) is a maximum of 2320pF at 15V. Power dissipation is rated at 2.5W (Ta), and it operates across a temperature range of -55°C to 150°C. The 8-SOIC package is supplied on tape and reel. This component is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 15 V |
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