SI4420DYTR
MOSFET N-CH 30V 12.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® SI4420DYTR is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 12.5A at 25°C. The device exhibits a low on-resistance (Rds On) of 9mOhm at 12.5A and 10V gate drive. With a maximum power dissipation of 2.5W (Ta) and a gate charge (Qg) of 78 nC at 10V, it is suitable for power management and switching circuits. The SI4420DYTR is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, supplied in Tape & Reel (TR). Key parameters include an input capacitance (Ciss) of 2240 pF (Max) at 15V and a gate-source voltage (Vgs) tolerance of ±20V. This MOSFET is utilized across various industries, including automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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