SI4420DY
MOSFET N-CH 30V 12.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® SI4420DY is an N-channel power MOSFET designed for surface mount applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12.5A at 25°C, with a maximum power dissipation of 2.5W (Ta). The Rds On is specified at a maximum of 9mOhm at 12.5A and 10V gate-source voltage. Drive voltages range from 4.5V to 10V for optimal Rds On performance. Key parameters include a maximum gate charge (Qg) of 78 nC at 10V and an input capacitance (Ciss) of 2240 pF at 15V. The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-SOIC package (0.154"", 3.90mm Width). This MOSFET is commonly utilized in power management, automotive, and industrial control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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