SI4410DYTRPBF
MOSFET N-CH 30V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® SI4410DYTRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current rating of 10A at 25°C ambient temperature, with a maximum power dissipation of 2.5W. The device exhibits a low on-resistance of 13.5mOhm at 10A and 10V Vgs, achieved with a gate drive voltage range of 4.5V to 10V. Key parameters include a maximum gate charge of 45nC at 10V and an input capacitance (Ciss) of 1585pF at 15V. The SI4410DYTRPBF is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, suitable for operation across a wide temperature range of -55°C to 150°C. This MOSFET is commonly found in industrial automation, consumer electronics, and automotive applications where robust power management is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 15 V |
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