SI4410DYPBF
MOSFET N-CH 30V 10A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® SI4410DYPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C ambient. The device features a low on-resistance of 13.5mOhm maximum at 10A, 10V, contributing to reduced conduction losses. Key electrical characteristics include a gate charge of 45nC maximum at 10V and an input capacitance of 1585pF maximum at 15V. The SI4410DYPBF is packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount format, suitable for compact board designs. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W (ambient). This MOSFET is utilized in various industrial sectors, including automotive and power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585 pF @ 15 V |
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